Silicon N-Channel MOSFET Tetrode
Description
BF 1005
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF 1005
Marking Ordering Code Pin Configuration MZs Q62702-F1498 1 = S 2=D
Package
3 = G2 4 = G1 SOT-143
Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature Symbol Value 8 25 10 3 200 - 55 .
.
.
+150 150 V mW °C Unit V mA
VDS ID
±I G1/2SM +VG1SE
Ptot T stg T ch
Thermal Resistance Channel - soldering point
Rthchs
≤370
K/W
Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group Semiconductor Group
11
Au 1998-11-01 -25-1998
BF 1005
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol Values Parameter min.
DC characteristics Drain-source breakdown voltage typ.
100 10 1 max.
12 13 50 1.
5 -
Unit
V(BR)DS
±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS
12 8 8 8 -
V
I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage
±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source current
µA nA mA
VG1S = 6 V, V G2S = 0 V
Gate 2 source leakage current ±VG2S = 8 V, V G1S = 0 V, V DS = 0 V Drain current
I DSS I DSO VG2S(p)
VDS = 5 V, V G1S = 0 , V G2S = 4.
5 V Operating current (selfbiased) VDS = 5 V, V G2S = 4.
5 V
Gate 2-source pinch-off voltage
V
VDS = 5 V, ID = 100 µA
AC characteristics Forward transconductance (self biased)
g fs Cg1ss Cdss G ps F 800
∆Gps
40
24 2.
1 1.
3 19 1.
4 50
2.
5 -
mS pF
VDS = 5 V, V G2S = 4.
5 V, f = 1 kHz
Gate 1-input capacitance (self biased)
VDS = 5 V, V G2S = 4 V, f = 1 MHz
Output capacitance (self biased)
VDS = 5 V, V G2S = 4 V, f = 100 MHz
Power gain (self biased) dB
VDS = 5 V, V G2S = 4 V...
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