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2SA1235A

GME

Silicon Epitaxial Planar Transistor


Description
Production specification Silicon Epitaxial Planar Transistor FEATURES  Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). Pb Lead-free  Excellent lineary DC forward current gain.  Super mini package for easy mounting. 2SA1235A APPLICATIONS  PNP epitaxial type transistor designed for low frequency.  Voltage ampl...



GME

2SA1235A

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