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TIP117

GME

PNP Epitaxial Silicon Darlington Transistor


Description
Production specification PNP Epitaxial Silicon Darlington Transistor TIP117 FEATURES  Monolithic Construction With Built in Base -Emitter Shunt Resistors. Pb Lead-free  Complementary to TIP112.  High DC Current Gain:hFE=1000@VCE=-4V,IC=-1A.  Low Collector-Emitter Saturation Voltage.  Industrial Use. TO-220AB MAXIMUM RATING operating temperatur...



GME

TIP117

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