NPN Transistor
Description
BDW93CFP ® BDW94CFP
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s MONOLITHIC DARLINGTON CONFIGURATION
s COMPLEMENTARY PNP - NPN DEVICES s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE s FULLY MOLDED INSULATED PACKAGE s 2000 V DC INSULATION (U.
L.
COMPLIANT)
APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION The BDW93CFP is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-220FP fully molded insulated package.
It is intented for use in power linear and switching applications.
The complementary PNP type is the BDW94CFP.
3 2 1
T0-220FP
INTERNAL SCHEMATIC DIAGRAM
R1 Typ.
= 10 KΩ
R2 Typ.
= 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0)
IC Collector Current ICM Collector Peak Current IB Base Current Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max.
Operating Junction Temperature
For PNP types voltage and current values are negative.
September 2001
NPN PNP
Value BDW93CFP BDW94CFP
100 100 12 15 0.
2 33 -65 to 150 150
Unit
V V A A A W oC oC
1/4
BDW93CFP / BDW94CFP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
3.
8 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off Current (IE = 0)
VCB = 100 V VCB = 100 V
Tcase = 150 oC
ICEO
Collector Cut-off Current (IB = 0)
IEBO
Emitter Cut-off Current (IC = 0)
VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0)
VCE(sat)∗ Collector-Emitter Saturation Voltage
VCE = 80 V VEB = 5 V IC = 100 mA
IC = 5 A IC = 10 A
IB = 20 mA IB = 100 mA
VBE(sat)∗ Base-Emitter Saturation Voltage
IC = 5 A IC = 10 A
IB = 20 mA IB = 100 mA
hFE∗ DC Current Gain
IC = 3 A IC = 5 A IC = 10 A
VCE = 3 V VCE = 3 V VCE = 3 V
VF* Parallel-diode Forward IF = 5 A
Voltage
IF = 10 A
hfe Small Signal Current IC = 1 A
Gain
f = 1 MHz
∗ Pu...
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