COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Description
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BDW93C BDW94B/BDW94C
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s
s s
STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package.
It is intented for use in power linear and switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
1 2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ.
= 10 KΩ
R2 Typ.
= 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ≤ 25 C Storage Temperature
o
Value BDW93C BDW94B 80 80 12 15 0.
2 80 -65 to 150 150 BDW94C 100 100
Un it
V V A A A W
o o
C C
Max.
Operating Junction Temperature
For PNP types voltage and current values are negative.
October 1999
1/6
BDW93C/BDW94B/BDW94C
THERMAL DATA
R thj -case Thermal Resistance Junction-case 1.
56
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C for BDW94B for BDW93C/94C V EB = 5 V I C = 100 mA for BDW94B for BDW 93C/94C IC = 5 A I C = 10 A IC = 5 A I C = 10 A IC = 3 A IC = 5 A I C = 10 A IF = 5 A I F = 10 A IC = 1 A f = 1 MHz V CE = 10 V 20 I B = 20 mA I B = 100 mA I B = 20 mA I B = 100 mA V CE = 3 V V CE = 3 V V CE = 3 V 1000 750 100 1.
3 1.
8 V CB = 80 V VCB = 100 V V CB = 80 V VCB = 100 V V CE = 80 V VCE = 100 V Min.
Typ.
Max.
100 100 5 5 1 1 2 Unit µA µA mA mA mA mA mA
I CEO IEBO
Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0)
V CEO(s us) ∗ Collector-Emitt er Sustaining Voltage (I B = 0) V CE(sat) ∗ V B...
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