UHF power transistor
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV98CE UHF power transistor
Product speciļ¬cation March 1993
Philips Semiconductors
Product speciļ¬cation
UHF power transistor
FEATURES Internal input matching to achieve high power gain Implanted ballasting resistors an for optimum temperature profile Gold metallization ensures excellent reliability DESCRIPTION
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