NPN switching transistor
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFX34 NPN switching transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES • High current (max.
2 A) • Low voltage (max.
60 V).
APPLICATIONS • High-current switching, e.
g.
inverters and switching regulators.
1 handbook, halfpage
BFX34
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
DESCRIPTION NPN switching transistor in a TO-39 metal package.
3
2 2
3
MAM317
1
Fig.
1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tcase ≤ 25 °C IC = 2 A; VCE = 2 V IC = 0.
5 A; VCE = 5 V; f = 100 MHz ICon = 5 A; IBon = 0.
5 A; IBoff = −0.
5 A CONDITIONS open emitter open base − − − − 40 70 − MIN.
MAX.
120 60 2 5 150 − 1.
2 MHz µs V V A W UNIT
1997 Apr 22
2
Philips Semiconductors
Product specification
NPN switching transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tcase ≤ 25 °C Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − − −65 − −65 MIN.
MAX.
120 60 6 2 5 1.
5 5 0.
87 +150 200 +150
BFX34
UNIT V V V A A A W W °C °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to case CONDITIONS VALUE 200 35 UNIT K/W K/W
thermal resistance from junction to ambient in free air
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off ...
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