Silicon Diode
Description
VRM = 400 V, IF(AV) = 1.
0 A General-purpose Rectifier Diode
EM1
Data Sheet
Description
The EM1 is a 400 V, 1.
0 A general-purpose rectifier diode with low loss characteristics.
This rectifier diode is for a commercial power supply.
Features
● VRM --------------------------------------------------- 400 V ● IF(AV)---------------------------------------------------- 1.
0 A ● VF (IF = 1.
0 A) --------------------------------- 0.
88 V typ.
● Bare Leads: Pb-free (RoHS Compliant) ● Flammability: Equivalent to UL94V-0
Applications
● Rectification Circuit ● Reverse Protection Circuit
Package
Axial (φ2.
7 × 5.
0L / φ0.
78)
Cathode Mark
(1)
(2)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
EM1-DSE Rev.
1.
3
SANKEN ELECTRIC CO.
, LTD.
1
Jun.
09, 2023
https://www.
sanken-ele.
co.
jp/en
© SANKEN ELECTRIC CO.
, LTD.
2018
EM1
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Conditions
Rating
Unit
Nonrepetitive Peak Reverse Voltage VRSM
450
V
Repetitive Peak Reverse Voltage
VRM
400
V
Average Forward Current
IF(AV) See Figure 2 and Figure 3
1.
0
A
Surge Forward Current
IFSM
Half cycle sine wave, positive side, 10 ms, 1 shot
45
A
I2t Limiting Value
I2t
1 ms ≤ t ≤ 10 ms
10.
1
A2s
Junction Temperature
TJ
− 40 to 150
°C
Storage Temperature
TSTG
− 40 to 150
°C
Electrical Characteristics
Unless otherwise specified, TA = 25 °C.
Parameter
Symbol
Forward Voltage Drop
Reverse Leakage Current Reverse Leakage Current under High Temperature Thermal Resistance(1)
VF IR H∙IR Rth(J-L)
Conditions IF = 1.
0 A VR = VRM VR = VRM, TJ = 150 °C See Figure 1
Min.
Typ.
Max.
Unit
—
0.
88 0.
97
V
—
—
10
µA
—
—
500
µA
—
—
17 °C/W
Mechanical Characteristics
Parameter Package Weight
Conditions
Min.
Typ.
Max.
Unit
―
0.
3
―
g
TL 10 mm Device
1.
6 mm
Diameter of soldering area: φ3 mm Cupper thickness: 50 µm
Figure 1.
Lead Temperature Measurement Conditions
(1) Rth (J-L) is thermal resistance between junction and lead.
...
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