N-Channel Enhancement Mode Field Effect Transistor
Description
STU1553
Sa mHop Microelectronics C orp.
STD1553Green
Product
Ver 1.
0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
150V
24A 66 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G S
STU SERIES TO - 252AA( D- PAK )
G DS
STD SERIES TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage ID Drain Current-Continuous c
TC=25°C TC=70°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit 150 ±20 24 20 70
6 75 52.
5 -55 to 175
2 50
Units V V A A A mJ W W °C
°C/W °C/W
Details are subject to change without notice.
1
Jul,24,2015
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