SIPMOS Small-Signal Transistor
Description
BSS 87
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.
8.
.
.
2.
0V
Pin 1 G
Pin 2 D
Pin 3 S
Pin 4 D
Type BSS 87 Type BSS 87
VDS
240 V
ID
0.
29 A
RDS(on)
6Ω
Package SOT-89
Marking KA
Ordering Code Q67000-S506
Tape and Reel Information E6327
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 240 240 Unit V
VDS VDGR VGS Vgs ID
RGS = 20 kΩ
Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current
± 14 ± 20 A 0.
29
TA = 23 °C
DC drain current, pulsed
IDpuls
1.
16
TA = 25 °C
Power dissipation
Ptot
1
W
TA = 25 °C
Semiconductor Group
1
Sep-18-1996
BSS 87
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 125 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Values typ.
max.
Unit
Static Characteristics Drain- source breakdown voltage
V(BR)DSS
240 1.
5 0.
1 10 1 3 4 2
V
VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.
8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100 0.
2
µA
VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
IGSS
10
nA Ω 6 10
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.
29 A VGS = 4.
5 V, ID = 0.
29 A
Semiconductor Group
2
Sep-18-1996
BSS 87
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit
gfs
0.
14 0.
33 115 15 8 -
S pF 155 25 12 ns 6 9
VDS≥ 2 * ID * RDS(on)max, ID = 0.
29 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitanc...
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