N-Channel MOSFET
Description
ADVANCE INFORMATION
BSS123
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS 100V
RDS(ON) 6.0Ω @ VGS = 10V
ID TA = +25°C
0.17A
Features and Benefits
Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (...
Diodes Incorporated
BSS123 PDF File
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