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BSM150GAL120DN2E3166

Siemens Semiconductor Group

IGBT

BSM150GAL120DN2E3166
BSM150GAL120DN2E3166

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Description
BSM150GAL120DN2E3166 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM150GAL120DN2E3166 1200V 210A Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage HALF BRIDGE GAL 2 C67076-A2112-A70 Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 210 150 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 420 300 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 1250 W + 150 -55 .
.
.
+ 150 ≤ 0.
1 ≤ 0.
25 ≤ 0.
125 4000 20 11 F 55 / 150 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Diode thermal resistance, chip-case,chopper Insulation test voltage, t = 1min.
Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD RTHJCDC Vis - Semiconductor Group 1 Nov-08-1996 BSM150GAL120DN2E3166 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min.
Static Characteristics Gate threshold voltage Values typ.
max.
Unit VGE(th) 4.
5 5.
5 2.
5 3.
1 2 8 6.
5 3 3.
7 V VGE = VCE, IC = 6 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 150 A, Tj = 25 °C VGE = 15 V, IC = 150 A, Tj = 125 °C Zero gate voltage collector current ICES 2.
8 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 320 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 62 11 1.
6 0.
6 - S nF - VCE = 20 V, IC = 150 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Nov-08-1996 BSM150GAL120DN2E3166 Electrical Characteristics, at Tj = 25 °C, unless o...


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