BUZ76
Semiconductor
Data Sheet
October 1998
File Number 2264.1
3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
Features
3A, 400V
[ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as SOA is Power Dissipation Limited /Subject switching regulators, switching c...
