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BUT11AI

Silicon Diffused Power Transistor

BUT11AI PDF File

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector Saturation current Inductive fall time CONDITIONS VBE = 0 V TYP.
2.
5 0.
08 MAX.
1000 450 5 10 100 1.
5 0.
15 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 2.
5 A; IB = 0.
33 A ICon = 2.
5 A; IBon = 0.
5 A PINNING - TO220AB PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN.
-65 MAX.
1000 450 5 10 2 4 100 150 150 UNIT V V A A A A W ˚C ˚C Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP.
MAX.
1.
25 60 UNIT K/W K/W August 1997 1 Rev 1.
000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat PARAMETER Collector cut-off current 1 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 9.
0 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH IC = 2.
5 A;IB...

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