POWER FIELD EFFECT TRANSISTOR
Description
GPT04N60A
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplie...
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