MOSFET
Description
March 2016
PRODUCT FEATURES
ƶ RDS(ON).
typ=0.
57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside
MMN1000DB010B
100V 1000A N-ch Power MOSFET Module
Preliminary
RoHS Compliant
APPLICATIONS
ƶ High efficiency DC/DC Converters ƶ Synchronous Rectifier
Type MMN1000DB010B
VDS 100V
ID 1000A
RDS(ON).
max TJ=25ć 0.
75mȍ
TJmax 175ć
Marking MMN1000DB010B
Package NDB
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VDSS Drain - Source Voltage
TJ=25ć
VGSS Gate - Source Voltage
ID Continuous Drain Current
TC=25ć TC=80ć
IDM Pulsed Drain Current at VGS=10V
Limited by TJmax
PD Maximum Power Dissipation
EAS Single Pulse Avalanche Energy
VDD=50V,L=1mH
Values 100 ±20 1250 1000 2000 1360 2500
THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
RthJC Thermal resistan...
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