DYNAMIC RAM MODULE
Description
Semiconductor
This version: Apr.
22.
1999
MSC23V26457TD-xxBS8
2,097,152-Word x 64-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSC23V26457TD-xxBS8 is a 2,097,152-word x 64-bit CMOS dynamic random access memory module which is composed of eight 16Mb(2Mx8) DRAMs in TSOP packages mounted with eight decoupling capacitors.
This is an 168-pin dual in-line memory module.
This module supports any application where high density and large capacity of storage memory are required.
FEATURES
· 2,097,152-word x 64-bit organization · 168-pin Dual In-line Memory Module · Gold tab · Single 3.
3V power supply, ±0.
3V tolerance · Input : LVTTL compatible · Output : LVTTL compatible, 3-state · Refresh : 2048cycles/ 32ms · /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability · Fast page mode with EDO, read modify write capability · Multi-bit test mode capability · Serial Presence Detect
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