2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
Description
Features
• Single Supply for Read and Write: 2.
7 to 3.
6V (BV), 3.
0 to 3.
6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer • Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout
– Two 8K Bytes Parameter Blocks
– Two Main Memory Blocks (96K, 128K Bytes) • Fast Erase Cycle Time – 10 Seconds • Byte-by-Byte Programming – 30 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation
– 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles
Description
The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory.
Its 2 megabits of memory is organized as 262,144 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range.
I/O1 14 I/O2 15 GND 16 I/O3 17 I/O4 18 I/O5 19 I/O6 20
Pin C...
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