Silicon Hot-Carrier Diodes
Description
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and VHF detector applications.
They are readily adaptable to many other fast switching RF and digital applications.
They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements.
They are also available in a Surface Mount package.
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ) • Very Low Capacitance − 1.
5 pF (Max) @ VR = 15 V • Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301 • S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current (DC)
Total Device Dissipation @ TA = 25°C MBD301G MMBD301LT1G, MMBD301LT3...
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