RF Power MOSFET Transistor
Description
DU2880V
RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
65
Gate-Source Voltage
VGS
20
Drain-Source Current Power Dissipation
IDS PD
8* 206
Junction Temperature Storage Temperature Thermal Resistance
TJ TSTG θJC
200 -55 to +150
0.
85
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
30
4.
5 - j14.
5
13.
5 +j4.
5
100
3.
0 - j10.
5
13.
5 + j6.
0
175
2.
0 - j7.
5
12.
0 + j4.
5
VDD = 28V, IDQ = 400mA, POUT = 80 W
ZIN is the series equivalent input impedance of the device from gate to source.
ZLOAD is the optimum series equivalent load impedance as measured from drain to ground.
Package Outline
Rev.
V1
ELECTRICAL CHARACTERISTICS AT 25°C
Par...
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