NPN EPITAXIAL SILICON TRANSISTOR
Description
KSE180/181/182
NPN EPITAXIAL SILICON TRANSISTOR
DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS
TO-126
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage : KSE180 : KSE181 : KSE182
Collector-Emitter Voltage : KSE180 : KSE181 : KSE182
Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC)
Collector Dissiapation (TA=25 ) Collector Dissipation ( TC=25 )
Junction Temperature Storage Temperature
Symbol VCBO
VCEO
VEBO IC IC IB PC PC TJ TSTG
Rating 60 80
100
40 60 80
7 3 6 1 1.
5 12.
5 150 -65 ~ 150
Unit V V V
V V V V A A A W W
1.
Emitter 2.
Collector 3.
Base
ELECTRICAL CHARACTERISTICS (Tc=25 )
Characteristic Collector Emitter Sustaining Voltage
: KSE180 : KSE181 : KSE182 Collector Cutoff Current : KSE180 : KSE181 : KSE182 : KSE180 : KSE181 : KSE182 Emitter Cutoff Current DC Current Gain
Symbol VCEO(sus)
ICBO
IEBO hFE
Collector Emitter Saturation Voltage VCE(sat)
Base-Emitter Saturation Vo...
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