PNP Transistor
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-126 Plastic-Encapsulate Transistors
BD434,436 TRANSISTOR (PNP)
FEATURES Amplifier and Switching Applications
TO-126
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
BD434 BD436
-22 -32
V
VCEO
Collector-Emitter Voltage
BD434 BD436
-22 -32
V
VEBO IC PC TJ Tstg
Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature
-5 -4 1.
25 150 -55-150
V A W
℃ ℃
1.
EMITTER 2.
COLLECOTR 3.
BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency (1)Pulse test.
Symbol V(BR)CBO
Test conditions
IC=-100μA,IE=0
BD434 BD436
VCEO(SUS)(1) IC...
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