NPN Silicon Epitaxial Power Transistor
Description
2SD2583
®
2SD2583
Pb
Pb Free Plating Product
NPN Silicon Epitaxial Power Transistor
FEATURES • Low VCE(sat)
VCE(sat) = 0.
15 V Max (@lC/lB = 1.
0 A/50 mA) • High DC Current Gain
hEF = 150 to 600 (@VCE = 2.
0 V, lC = 1.
0 A)
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current (TA = 25 °C)
Collector to Base Voltage
VCB0
30 V
Collector to Emitter Volteage
VCE0
30 V
Emitter to Base Voltage
VEB0
6.
0 V
Collector Current (DC)
IC(DC)
5.
0 A
Collector Current (Pulse)*
IC(Pulse)
10 A
Base Current (DC)
IB(DC)
2.
0A
* PW ≤ 10ms, Duty Cycle ≤ 10 %
Maximum Power Dissipation
Total Power Dissipation (TC = 25 °C) PT
10 W
Total Power Dissipation (TA = 25 °C) PT
1.
0 W
Maximum Temperature
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg −55 to 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PACKAGE DIMENSIONS in millimeters (inches)
8.
5 MAX.
(0.
334 MAX.
)
2.
8 MAX.
(0.
110 MAX.
)
φ 3.
2 ± 0.
2 (φ 0.
126)
φ 3.
2 ± 0.
2 (φ 0.
126)
12.
0 MAX.
(0.
472 MA...
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