Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 5A ·Low Saturation Voltage -
: VCE(sat)= 0.
15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain-
: hFE= 150~600@ IC= 1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5.
0
A
ICP
Collector Current-Pulse
10
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2.
0
A
1.
0 W
10
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD2583
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iscsemi.
com
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.
1A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.
2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.
1A
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
fT
Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 10V, ftest= 1MHz
2SD2583
MIN TYP.
MAX UNIT
0.
15 V
0.
25 V
0.
5
V
1.
5
V
0.
1 μA
0.
1 μA
150
600
50
120
MHz
77
pF
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for u...
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