Power Transistor
Description
Power Transistor
FEATURES
z Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
z Complements the 2SB1184.
APPLICATIONS
z Epitaxial planar type. z NPN silicon transistor.
Pb
Lead-free
Production specification
2SD1864
TO-251
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Vo...
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