Insulated Gate Bi-Polar Transistor - IXYS
Description
WESTCODE
An IXYS Company
Date:- 21 Jan, 2011 Data Sheet Issue:- P1
Prospective Data
Insulated Gate Bi-Polar Transistor Type T0850VB25E
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM LIMITS
2500
1250
±20
UNITS
V V V
IC(DC) ICRM IECO PMAX Tjop Tstg
RATINGS
Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range.
Storage temperature range.
Notes: -
1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) The use of an anti-parallel diode is recommended.
MAXIMUM LIMITS
850 1700 850 4.
4
-40 to +125 -40 to +125
UNITS
A A A kW °C °C
Prospective Data Sheet T0850VB25E Issue P1
Page 1 of 6
January, 2011
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T08...
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