Insulated Gate Bi-Polar Transistor
Description
WESTCODE
An IXYS Company
Date:- 2 Nov, 2011 Data Sheet Issue:- A1
Advance Data
Insulated Gate Bi-Polar Transistor Type T0600TB45A
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage
MAXIMUM LIMITS
4500
2800
±20
UNITS
V V V
IC(DC) ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg
RATINGS
DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range.
Storage temperature range.
Notes: 1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
MAX...
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