NPN Transistor
Description
MMBTA43
TRANSISTOR(NPN)
SOT–23
FEATURES High Voltage Application Telephone Application Complementary to MMBTA93 MARKING:ABX
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
200
VCEO Collector-Emitter Voltage
200
VEBO Emitter-Base Voltage
5
IC Collector Current
500
PC Collector Power Dissipation
350
RΘJA Thermal Resistance From Junction To Ambient
357
Tj Junction Temperature Tstg Storage Temperature
150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
1.
BASE 2.
EMITTER 3.
COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=0.
1mA, IE=0
200
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
200
V
Emitter-base breakdown voltage
V(BR)EBO IE=0.
1mA, IC=0
5
V
hFE(1)* VCE=10V, IC=10mA
40
DC current gain
hFE(2)* VCE=10V, IC=1mA
40
hFE(3)* VCE=10V, IC=30mA
40
Colle...
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