High-Voltage NPN Transistor
Description
High-Voltage NPN Transistor Surface Mount
P b Lead(Pb)-Free
COLLECTOR 3
1 BASE
2 EMITTER
Maximum Ratings (TA=25°C Unlesso therwise noted)
Rating
Symbol
Collector-Emitter Voltage
MMBTA42 MMBTA43
VCEO
Collector-Base Voltage
MMBTA42 MMBTA43
VCBO
Emitter-Base Voltage
MMBTA42 MMBTA43
Collector Current-Continuous
VEBO IC
MMBTA42 MMBTA43
1 2
3
SOT-23
Value
300 200
300 200
6.
0 6.
0
500
Unit
V V
V mA
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (Note.
1) TA=25°C Derate above 25°C Thermal Resistance, Junctionto Ambient (Note.
1) Total Device Dissipation Alumina Substrate (Note.
2) TA=25°C Derate above 25°C Thermal Resistance, Junctionto Ambient (Note.
1)
Junctionand Temperature Range
Storage Temperature Range
Device Marking
MMBTA42 = 1D , MMBTA43 = M1E
1.
FR-5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
Symbol
PD RθJA
PD RθJA
TJ Tstg
Max
225 1.
8 556
300 2.
4 417 +150 -55 to +150
Unit
mW mW/°C °C/W
mW mW/°C ...
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