SMD High Voltage Transistor
Description
SMD High Voltage Transistor (NPN)
MMBT5550/MMBT5551
SMD High Voltage Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications
• RoHS compliance
Mechanical Data
SOT-23
Case: Terminals:
Weight:
SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.
008 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MMBT5550
MMBT5551
VCEO VCBO VEBO
IC
Marking Code Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
M1F
G1
140 160
160 180
6.
0
600
Thermal Characteristics
Symbol
Ptot RθJA Ptot RθJA TJ, TSTG
Description Total Device Dissipation FR-5 Board, (Note 1) TA= 25°C Derate above 25°C
Thermal Resistance from Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA= 25°C, Derate above 25°C
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature Range
MMBT5550
MMBT5551
225 1.
8 556
300
2.
4...
Similar Datasheet
