EPITAXIAL PLANAR NPN TRANSISTOR
Description
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES Complementary to BC807.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage
VCBO VCEO
50 45
Emitter-Base Voltage
VEBO
5
Collector Current
IC 800
Emitter Current
IE -800
Collector Power Dissipation
PC* 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Package Mounted On 99.
9% Alumina 10 8 0.
6mm.
UNIT V V V mA mA mW
BC817
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.
93+_ 0.
20
B 1.
30+0.
20/-0.
15
A G H
D
23
C 1.
30 MAX D 0.
40+0.
15/-0.
05
E 2.
40+0.
30/-0.
20 1 G 1.
90
H 0.
95
J 0.
13+0.
10/-0.
05
K 0.
00 ~ 0.
10 Q
PP
L 0.
55
M 0.
20 MIN
N 1.
00+0.
20/-0.
10
C N K J
P7
Q 0.
1 MAX
M
1.
EMITTER 2.
BASE 3.
COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Satura...
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