PNP Silicon AF Transistors
Description
SMD Type
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Transistors
PNP Silicon AF Transistors KC808A(BC808A)
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
+0.
12.
4 -0.
1
SOT-23
2.
9+0.
1 -0.
1
0.
4+0.
1 -0.
1
3
12 0.
95+0.
1
-0.
1
1.
9+0.
1 -0.
1
+0.
11.
3 -0.
1
0.
55 0.
4
Unit: mm 0.
1+0.
05
-0.
01
+0.
10.
97 -0.
1
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current Total power dissipation Storage temperature Junction temperature
Symbol VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj
Rating -30 -25 -5 -500 -1 -100 310
-65 to +150 150
Unit V V V mA A mA
mW
0-0.
1 +0.
10.
38
-0.
1
1.
Base 2.
Emitter 3.
collector
Electrical Characteristics Ta = 25
Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
KC808A-16 KC...
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