MOSFET
Description
SSF1116
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current
ID =75A BV=110V Rdson=12mΩ (Typ.
)
Description: The SSF1116 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET.
This new technology increases the device reliability and electrical parameter repeatability.
SSF1116 is assembled in high reliability and qualified assembly house.
Application: Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC
Continuous drain current,VGS@10V
ID@Tc=100ْC Continuous drain current,VGS@10V
IDM PD@TC=25ْC
Pulsed drain current ① Power dissipation
Linear derating factor
VGS EAS EAR dv/dt
Gate-to-Source voltage Single pulse avalanche energy ②
Repetitive avalanche energy Peak diode recovery voltage
TJ TSTG
Operating Junction and Storage Temperature Range
SSF1116 TOP View (T0-220)
Max.
75 61 300 273 1.
5 ±20 300 TBD 31
–55 to +...
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