Silicon Power Schottky Diode
Description
Silicon Power Schottky Diode
Features • High Surge Capability • Types up to 45 V VRRM • Not ESD Sensitive
Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
SD51 thru SD51R
VRRM = 45 V IF = 60 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
SD51 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 100 °C TC = 25 °C, tp = 8.
3 ms
45 32 45 60
800
-55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Thermal characteristics Thermal resistance, junction case
VF IF = 60 A, Tj = 25 °C
IR
VR = 45 V, Tj = 25 °C VR = 45 V, Tj = 125 °C
RthJC
SD51...
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