High Voltage Transistors
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA42/D
High Voltage Transistors
NPN Silicon
COLLECTOR 3
MPSA42 * MPSA43
*Motorola Preferred Device
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol MPSA42 MPSA43 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
300 200 300 200 6.
0 6.
0
500 625 5.
0
Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.
5 Watts 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/mW °C/mW
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = 1.
0 mAdc, IB ...
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