AMPLIFIER TRANSISTOR
Description
MHQ3798 MHQ3799
CASE 632-02, STYLE 1
TO-116
QUAD
AMPLIFIER TRANSISTOR
PNP SILICON
Refer to 2N3810 for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ Ta = 25°C
Derate above 25°C Total Device Dissipation
@ TC = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol MHQ3798 MHQ3799
VCEO VCBO VEBO
>C
40 60
60
5.
0
50
Each Transistor
Total Device
PD
0.
5 2.
86
1.
5 8.
58
Pd Tj, T st g
1.
0 5.
71
3.
5 20
-65 to +200
ELECTRICAL CHARACTERISTICS )
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown VoltageO) c(l = 10 mAdc, Ib = 0)
MHQ3798 MHQ3799
Collector-Base Breakdown Voltage (Iq = 10 /nAdc,Je = 0) Emitter-Base Breakdown Voltage (lg = 10 MAdc, lc = 0) Collector Cutoff Current (Vcb = 50 Vdc, lg = 0) Emitter Cutoff Current (Vbe = 3.
0 Vdc, Iq 0) ON CHARACTERISTICS
DC Current Gain...
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