N-Channel MOSFET
Description
WNM3011
N-Channel, 30V, 5.
7A, Power MOSFET
WNM3011
Http://www.
willsemi.
com
V(BR)DSS 30V
Rds(on) ()
0.
028@ 10V 0.
039@ 4.
5V
Descriptions
The WNM3011 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion and power switch applications.
Standard Product WNM3011 is Pb-free.
SOT-23-6L
DDS 65 4
123 DDG
Configuration (Top View)
Features
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L
Applications
6 54
3011 YYWW
1 23
3011 YY WW
= Device Code =Year =Week
Marking
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit z Power Switch z Load Switch z Charging
Order Information
Device
Package
WNM3011-6/TR SOT-23-6L
Shipping 3000/Tape&Reel
Will Semiconductor Ltd.
1 Dec, 2011 - Rev.
1.
0
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