MOSFET
Description
SVD640T/D/F_Datasheet
18A, 200V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
18A,200V,RDS(on)(typ.
)=0.
12Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
ORDERING INFORMATION
Part No.
Package
SVD640T SVD640D SVD640DTR SVD640F
TO-220-3L TO-252-2L TO-252-2L TO-220F-3L
Marking SVD640T SVD640D SVD640D SVD640F
Material Pb free Halogen free Halogen free Pb free
Packing Tube Tube
Tape & Reel Tube
ABSOLUTE MAXIMUM RATING...
Similar Datasheet
- SVD640D MOSFET - Silan Microelectronics
- SVD640F MOSFET - Silan Microelectronics
- SVD640T MOSFET - Silan Microelectronics
