N-CHANNEL ENHANCEMENT MODE MOSFET
Description
DG10N60
N N-CHANNEL ENHANCEMENT MODE MOSFET
：V1.
0
General Description
DG10N60N，， ，，，。 ，，。
DG10N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS
VDSS ID
RDS(ON) Crss
600 10 0.
8 20
V A Ω pF
Symbol Package
1 /9
ABSOLUTE MAXI...
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