Power-MOSFET
Description
BSO150N03MD G
OptiMOS™3 M-Series Power-MOSFET
Features • Dual N-channel • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% Avalanche tested • Very low on-resistance R DS(on) @ V GS=4.
5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified for consumer level application
Product Summary
V DS R DS(on),max
ID
V GS=10 V V GS=4.
5 V
30 V 15 mΩ 18.
2 9.
3 A
PG-DSO-8
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type BSO150N03MD G
Package PG-DSO-8
Marking 150N03MD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
I D V GS=10 V, T A=25 °C V GS=10 V, T A=90 °C V GS=4.
5 V, T A=25 °C
V GS=4.
5 V, T A=90 °C
Pulsed drain current2)
I D,pulse T A=25 °C
Avalanche current, single pulse3)
I AS
T A=25 °C
Avalanche energy, single pulse
E AS I D=9.
3 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation...
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