Darlington Complementary Silicon Power Transistors
Description
BDW42G (NPN), BDW46G, BDW47G (PNP)
Darlington Complementary Silicon Power Transistors
This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.
Features
• High DC Current Gain − hFE = 2500 (typ) @ IC = 5.
0 Adc.
• Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47
• Low Collector Emitter Saturation Voltage
VCE(sat) = 2.
0 Vdc (max) @ IC = 5.
0 Adc 3.
0 Vdc (max) @ IC = 10.
0 Adc
• Monolithic Construction with Built−In Base Emitter Shunt resistors • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage BDW46 BDW42, BDW47
Collector-Base Voltage BDW46 BDW42, BDW47
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
VCEO...
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