MOSFET
Description
PE544JZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 8.
5mΩ @VGS = 4.
5V
ID 39A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
TC = 25 °C
39
Continuous Drain Current2
TC = 100 °C TA = 25 °C
ID
24 12
Pulsed Drain Current1
TA = 70 °C
IDM
9.
7 60
Avalanche Current
IAS 23.
5
Avalanche Energy
L = 0.
1mH
EAS
27.
6
TC = 25 °C
23
Power Dissipation
TC = 100 °C TA = 25 °C
PD
9.
4 2.
2
TA = 70 °C
1.
4
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient3
RJA
55
Junction-to-case
RJC
5.
3
1Pulse width limited by maximum junction temperature.
2Package limitation current is 24A.
3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, ...
Similar Datasheet
