Space 1-MBit (128K x 8) Paged Parallel EEPROM
Description
Features
• Fast Read Access Time – 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer • Fast Write Cycle Time
– Page Write Cycle Time – 10 ms Maximum
– 1 to 128-byte Page Write Operation • Low Power Dissipation
– 50 mA Active Current
– 10 mA CMOS Standby Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology
– Endurance: 5.
104 Read/Modify Write Cycles @ Ground Level
– Data Retention: 10 Years • Operating Range: 4.
5V to 5.
5V, -55 to +125°C • CMOS and TTL Compatible Inputs and Outputs • No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2 • Tested up to a Total Dose of (according to MIL STD 883 Method 1019):
– 10 kRads (Si) Read-only Mode when Biased
– 30 kRads (Si) Read-only Mode when Unbiased • JEDEC Approved byte-Wide Pinout
435 Mils Wide 32-Pin Flat Pack Package
AT2010-12DK Mil
Space 1-MBit (...
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