N&P-Channel MOSFET
Description
PV604CA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V
RDS(ON) 25mΩ @VGS =10V
-40V
35mΩ @VGS = -10V
ID 6A -5.
5A
Channel N P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH.
LIMITS
Drain-Source Voltage
N 40 VDS P -40
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70°C
N6 P -5.
5 ID N 5 P -4.
5
Pulsed Drain Current1
N 30 IDM P -25
Avalanche Current
N 12 IAS P -23
Avalanche Energy
L = 0.
1mH
N 7.
2 EAS P 26
Power Dissipation3
TA = 25 °C TA = 70 °C
N 2
P PD
N 1.
3
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
REV 1.
0 1 2014/8/5
PV604CA
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
t ≦10s RqJA
Steady-State
N-ch
60 91
Junction-to-Ambient2
t ≦10s RqJA
Steady-State
P-ch
60 90
1Pulse width limited by maximum junction temperatur...
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