Power MOSFET
Description
R8002ANJ
Nch 800V 2A Power MOSFET
VDSS RDS(on)(Max.
)
ID PD
800V 4.
3Ω ±2A 62W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Parallel use is easy.
4) Pb-free plating ; RoHS compliant
lOutline
TO-263S
SC-83
LPT(S)
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching Power Supply
Type Tape width (mm) Basic ordering unit (pcs)
24 1000
Taping code
TL
Marking
R8002ANJ
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
800 V
Continuous drain current (Tc = 25°C)
ID*1 ±2 A
Pulsed drain current
IDP*2 ±8 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 1 A
Avalanche energy, single pulse
EAS*3
0.
265
mJ
Power dissipation (Tc = 25°C)
PD 62 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20170905 - Rev.
001
R8002ANJ
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Datasheet
Symbol
RthJC RthJA Tsold
Values Unit
Min.
Typ.
Max.
- - 2.
01 ℃/W
- - 80 ℃/W
- - 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
Zero gate voltage drain current
Gate - Source leakage current Gate threshold voltage
Static drain - source on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 800V, VGS = 0V IDSS Tj = 25°C
Tj = 125°C IGSS VGS = ±30V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 1.
0A RDS(on)*4 Tj = 25°C
Tj = 125°C RG f = 1MHz, open drain
Values Unit
Min.
Typ.
Max.
800 - - V
- - 100 μA --- - ±100 nA 3.
0 - 5.
0 V
- 3.
3 4...
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