MOSFET
Description
FQA8N100C — N-Channel QFET® MOSFET
FQA8N100C
N-Channel QFET® MOSFET
1000 V, 8 A, 1.45 Ω
Features
RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V, ID = 4 A Low Gate Charge (Typ. 53 nC) Low Crss (Typ. 16 pF) 100% Avalanche Tested
March 2014
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, pl...
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