MOSFET
Description
FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET
October 2014
FCD850N80Z / FCU850N80Z
N-Channel SuperFET® II MOSFET
800 V, 6 A, 850 m Features
Typ. RDS(on) = 710 mTyp.) Ultra Low Gate Charge (Typ. Qg = 22 nC) Low Eoss (Typ. 2.3 uJ @ 400V) Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF) 100% Avalanche Tested RoHS Complian...
Similar Datasheet
- FCU850N80Z MOSFET - Fairchild Semiconductor