MOSFET
Description
FDMS3610S PowerTrench® Power Stage
December 2011
FDMS3610S
PowerTrench® Power Stage
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A
Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A ...
Similar Datasheet
- FDMS36101L_F085 MOSFET - Fairchild Semiconductor
- FDMS3610S MOSFET - Fairchild Semiconductor
- FDMS3615S MOSFET - Fairchild Semiconductor