Power MOSFET
Description
R6004ENX
Nch 600V 4A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on)(Max.
)
0.
98Ω
ID
±4.
0A
TO-220FM
PD
40W
lFeatures
1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant
lInner circuit
lApplication Switching
lPackaging specifications
Code
Packing
C7 G
Tube
C7
Tube*
- (Blank)
Bulk*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
600
V
±4.
0
A
±8.
0
A
Gate - Source voltage
static
AC(f＞1Hz)
VGSS
±20
V
±30
V
Avalanche current, repetitive Avalanche energy, single pulse Avalanche energy, repetitive
IAS EAS*3 EAS*3
0.
8
A
46
mJ
0.
13
mJ
Power dissipation (Tc = 25°C)
PD
40
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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1/12
20200131 - Rev.
002
R6004ENX
lAbsolute maximum ratings (Ta = 25°C) Parameter
Reverse diode dv/dt
Drain - Source voltage slope
Datasheet
Symbol
dv/dt
Conditions -
Values Unit 15 V/ns
dv/dt VDS = 480V, Tj = 25℃ 50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Symbol
RthJC*4 RthJA Tsold
Values Unit
Min.
Typ.
Max.
-
- 3.
13 ℃/W
-
- 70 ℃/W
-
- 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
Zero gate voltage drain current
Gate - Source leakage current Gate threshold voltage
Static drain - source on - state resistance
Gate resistance
VDS = 600V, VGS = 0V IDSS Tj = 25°C
Tj = 125°C IGSS VGS = ±20V, ...
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