700V N-Channel Super Junction MOSFET
Description
HCD70R1K4P
HCD70R1K4P
700V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.15 ȍ(Typ.) @VGS=10V 100% Aval...
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